The dielectric properties of Co-implanted SiO2 investigated using spatially-resolved EELS
نویسندگان
چکیده
Metallic quantum dots implanted in a silicon dioxide thin layer, grown on a silicon substrate, show promising field emission properties, giving an emission current of 1nA at electric fields as low as 5V/μm. This value is achieved for an implantation dose 5x10 16 ions/cm 2 , compared to 120 V/μm for the lowest dose. Electron microscopy reveals that the Co dots form metallic spheres, with a narrow diameter distribution (1-5nm). Increasing the dose to 7x10 16
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